CSVTU BE III Semester Electrical Engineering Solid State Devices Syllabus
CSVTU BE III Semester EE Solid State Devices Syllabus
CHHATISGARH SWAMI VIVEKANAND TECHNICAL UNIVERSITY, BHILAI (C.G.)
Semester:B.E. III Branch: Electrical
Subject: Solid State Devices
Total Theory Periods: 40 Total Tut Periods: 12
Total Marks in End Semester Exam: 80
Minimum number of Class tests to be conducted: 2
Semiconductors: Intrinsic and extrinsic semiconductors, P – type and N – Type
semiconductors, Theory of P-N junction diode, formation of space charge region,
Forward and reverse biasing of diodes, energy band diagram of a diode, V-I
Characteristics of diodes, equivalent circuit of diode, junction capacitances of diode.
Rectifiers: Half wave and full wave bridge rectifier circuits, C filter, L filter, LC filter,
CLC/II filter, various parameters of power supply, Zener diode and regulated power
supply using Zener diodes.
Transistors: PNP and NPN transistors, construction and current components, transistor as
an amplifier, CE, CB and CC amplifier circuit, input and output characteristics of
transistor circuits, various parameters of transistor, DC load line, Biasing of transistor
amplifier, biasing stability, transistor as a switch.
Field Effect Transistor: Construction, principle of working and V-I characteristics.
MOSFET: Construction, principle of working and V-I characteristics, Depletion and
enhancement type MOSFET, CMOS, FET biasing, parameters of a FET.
Feedback amplifiers and oscillators: General feedback theory, current and voltage
feedback, Effect of negative feedback, condition for oscillation, RC phase oscillator,
Hartley and Colpitt’s oscillator, Crystal oscillator, Tunnel Diode Oscillator.
1. “Integrated Electronics”, Millman and Halkias, TMH Pbs.
2. “Electronic devices and circuits”, Boylestad & Nashelsky, Pearson Pbs.
1. “Microelectronic Circuits”, Sedra Smith, Oxford Pbs.
“Electronic circuit analysis and design”, Donald, TMH Pbs