NIT Delhi Syllabus B Tech for Electronic Devices & Circuits-I
NIT Delhi Syllabus
Electronic Devices & Circuits-I
ELECTRONIC DEVICES & CIRCUITS-I
Semiconductors: review of band theory of solids. carrier concentrations of N and P type semiconductors.
Hall effect and its applications. semiconductor diodes: band structure of P-N junction. volt-ampere characteristics. zener and avalanche breakdowns. the principles of photo diode, LED & LCD. junction
transistor: PNP and NPN junction transistors. characteristics of the current flow across the base regions.
transistor biasing: DC bias and various stabilization circuits. thermal runaway & thermal stability. field
effect transistors:jfet and its characteristics. MOSFET; enhancement , depletion modes. biasing of FETs.
small signal low frequency transistor amplifier circuits: analysis of transistor amplifier circuits using ‘h’
parameters. RC coupled amplifier, effect of bypass and coupling capacitors on the low frequency response
of the amplifier. FET amplifiers – low frequency
– 7 –
and high frequency models. rectifiers: diode as a rectifier, half wave, full wave and bridge
rectifiers. electron dynamics: motion of charged particles in electric and magnetic fields. principle of
CRT , deflection sensitivity.
1. Integrated Electronics, MILLIAN & HALKIAS, Mc Graw Hill.
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