# CHARUSAT Solid State Electronics Syllabus

CHAROTAR UNIVERSITY OF SCIENCE & TECHNOLOGY
FACULTY OF TECHNOLOGY & ENGINEERING
V. T. PATEL DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
B. TECH. (ELECTRONICS & COMMUNICATION)
2ND YEAR SEMESTER: III
EC 203: SOLID STATE ELECTRONICS

______________________________________________________________________
Credit Hours:
Teaching Scheme
Theory
Practical
Total
Credit
Hours/week
4
2
6
5
Marks
100
50
150
A. Objective of the Course:
This course will introduce the students about various analog electronic devices and circuits such as Diodes, Transistor Characteristics, Transistor Biasing and Thermal Stabilization, Field Effect Transistor, Multistage Amplifiers. With this they can design the circuits as per the applications.
B. Out line of the Course:
Sr. No.
Title of the Unit
Minimum Number of Hours
1.
Semiconductor Physics
8
2.
Semiconductor Diode Characteristics
8
3.
Transistor Characteristics and Transistors Biasing and Thermal Stabilization
10
4.
BJT as Small Signal Low Frequency Amplifier
10
5.
Field Effect Transistor
8
6.
Transistor at High Frequencies
8
7.
Multistage Amplifiers
8
Total Hours (Theory):60
Total Hours (Lab): 30
Total Hours: 90
© CHARUSAT 2012 Page 25 of 154
C. Detailed Syllabus:
1.
Semiconductor Physics 8 Hrs
13%
1.1
The Energy Band Theory of Crystals, Insulators, Semiconductors and Metals, Mobility and Conductivity, Electrons and Holes In An Intrinsic Semiconductor, Donor and Acceptor Impurities, Charge Densities
1 Hr
1.2
Mobility and Conductivity, Electrons and Holes in an Intrinsic Semiconductor, Donor and Acceptor Impurities, Charge Densities
1 Hr
1.3
Hall Effect, Conductivity Modulation, Generation And Recombination of Charges Diffusion
1 Hr
1.4
Continuity Equation, Injected Minority Carrier Charge, Potential Variation Within a Graded Semiconductor
1 Hr
1.5
Energy Distribution of Electrons in a Metal, Fermi-Dirac Function, Densities of States, Electron Emission From A Metal
2 Hrs
1.6
Carrier Concentration In An Intrinsic Semi, Fermi-Level, Band Structure of An Open-Circuit PN Characteristic, Dynamic Diffusion Capacitance
2 Hrs
2.
Semiconductor Diode Characteristics 8 Hrs
13%
2.1
Open-Circuited PN Junction, P-N Junction as A Rectifier, Current Components in A PN Junction Diode
2 Hrs
2.2
Volt-Ampere Characteristics, Photo-Diode, Temperature Dependence of Diode Characteristic, Transition Capacitance (CT), Diffusion Capacitance
3 Hrs
2.3
Diode Resistance, Charge Control Description of A Diode, Rectifiers, Full Wave Circuits, C, LC, II Filters
3 Hrs
3.
Transistor Characteristics And Transistors Biasing and Thermal Stabilization 10 Hrs
17%
3.1
Junction Transistor, Transistor Action, Transistor Currents Component, Transistor as a Amplifier
3 Hrs
3.2
Transistor Configurations- CB, CC, CE, CE Cutoff, And Saturation Regions, Maximum Voltage Rating, DC Operating Point
3 Hrs
3.3
Bias Stabilization, Stabilization Techniques, Bias Compensation, Thermal Runaway, Phototransistor
4 Hrs
© CHARUSAT 2012 Page 26 of 154
4.
BJT As Small Signal Low Frequency Amplifier 10 Hrs
17%
4.1
Transistor As An Amplifier, General Characteristics Of An Amplifier, Hybrid Model, Determination Of H-Parameters From Characteristics.
2 Hrs
4.2
Analysis Of Amplifier Circuit Using H-Parameters. Common Emitter Circuit, Common Collector Or Emitter Follower Circuit, Common Base Circuit,
3 Hrs
4.3
Analysis Of Common Emitter Amplifier With Collector To Base Bias, Comparison Of Transistor Amplifier Configurations, Linear Analysis Of A Transistor,
3 Hrs
4.4
Miller’s Theorem And It’s Dual, Cascading Transistor Amplifiers, Simplified CE And CC Hybrid Model
2 Hrs
5.
Field Effect Transistor 8 Hrs
13%
5.1
Construction Of JFET, Operation Of JFET, JFET Characteristics, Pinch-Off Voltage,
2 Hrs
5.2
JFET Volt-Ampere Characteristics, FET Small Signal, MOSFET, FET As A VVR FET Biasing,
2 Hrs
5.3
Fixed Bias Circuit, Voltage Divider Biasing Circuit, Self Bias Circuit, Biasing For Depletion Type MOSFET,
2 Hrs
5.4
JFET As An Amplifier, JFET Low Frequency Small Signal Model, Common Source Circuit, Common Drain Circuit
2 Hrs
6.
Transistor At High Frequencies 8 Hrs
13%
6.1
Hybrid II CE Transistor, Hybrid II Conductance, Hybrid II Capacitance. Validity At Hybrid II Model, Variation Of Hybrid II Parameters
3 Hrs
6.2
CE Short-Circuit Current Gain, Current Gain With Resistive Load, Single Stage CE Transistor Amplifier Response
3 Hrs
6.3
Gain- Bandwidth Product, Emitter Follower At High Frequency
2 Hrs
7.
Multistage Amplifiers 8 Hrs
14%
7.1
Classification of Amplifiers, Distortion in Amplifiers, Frequency Response of an Amplifier, Step Response of an Amplifier.
3 Hrs
© CHARUSAT 2012 Page 27 of 154
7.2
Bandpass of Cascaded Stages, Two Stage RC Amplifier, Low Frequency Response of An RC-Coupled Stage. Effect of An Emitter Bypass Capacitor on Low Frequency Response
3 Hrs
7.3
High Frequency Response of Two Cascaded CE Transistor Stages, Multistage CE Amplifier Cascade At High Frequencies
2 Hrs
D. Instructional Methods and Pedagogy
 OHP
 Chapter wise Assignments
 Quiz
 Audio Visual Presentations
 Chalk + Board
 White Board
 Online Demo
D. Student Learning Outcomes:
 Upon completion of this course, students will understand the operation, function and interaction between various components and its characteristics.
 Students will also get detail study of Rectifiers, Transistor Biasing, H-Parameters, FET, Multistage Amplifiers.
F. Recommended Study Materials
 Reference Book & Text Book:
1.Electronics Devices and Circuit Theory ( sixth Edition) by Boylestead & Louis Nashelsky published
by Pearson Education Asia
2.Integrated Electronics by Jacob Millman Grable Tata McGraw-Hill Edition 1991

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